キーワード Fig.2 が含まれる動画 ： 9 件中 1 - 9 件目
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三角関係の矛盾を解く
■ CMが面白かったので速攻で作った。アイデアを思いついた時はガッツポーズをしてしまった(^_^;)。
■ あ。ローレンツ収縮後に直角三角形が正三角形に見えるのだから、グラウンド上で見るのがfig.1で、移動観測者が見るのがfig.2だった。ドジは直らんなorz。
■ オリジナルのCM情報はココ→ http://www.matchnews.com/
◇投稿作品集→mylist/25440009
時計のステッピングモータを解説
bgmはsm3505467から
時計のステッピングモータについての解説です
※1 動画中ではうp主の手元にあった時計の中身に合わせた形の図としましたが、原理としては http://ewh.ieee.org/soc/es/Nov1998/12/BEGIN.HTM の Fig. 2 のような形のものが一般的なようです
※2 最後に付けた参考文献についての補足ですが、連載期間は『Computer fan』'94年の1号(?)～7号です。またその連載とは別に、単発で、『I/O』第18巻第9号（'93年9月号（通巻203号））pp. 54〜60 に「ムッシュ」の紹介記事が、『Computer fan』'95年3号 pp. 100～101 に新モデル「ニーニョ」の記事があります（というか今確認してみたら『I/O』の記事のほうが部分的には詳しかった）
mylist/31105375
三味線石
by kanoguti ■テレパスミュージック ttp://telepassrecord.blog25.fc2.com/■変な三味線とか自我とか不協和音とかが混じったへんてこナースの曲です。
![Garde=Movies Fig.2 [人を忘れた]](https://nicovideo.cdn.nimg.jp/thumbnails/14716539/14716539)
F+G+O
Atomic-scale buckling of a Si layer.—Proof for the presence of Si atoms at the surface comes from the surface-sensitive Si 2𝑝 photoelectron spectrum obtained at normal emission, shown in Fig. 2(a). The sharpness of the features is a clear indication of Si atoms in well-defined chemical environments different from those at the Si(111)-(7 ×7) surface. As quantified by a peak fitting, the Si 2𝑝 doublet consists of three components labeled 𝛼, 𝛽, and 𝛾, which are related to three different chemical environments of the Si ad-atoms, denoted Si𝐴, Si𝐵, and Si𝐶. Relative to the main peaks which have major contributions from the 𝛽 chemical state, 𝛾 and 𝛼 are shifted 140 ±5 meV and 260 ±5 meV, respectively. The respective areal weights for peaks 𝛼, 𝛽, and 𝛾 are 0.32 ±0.05, 0.55 ±0.05 and 0.13 ±0.05. The single in-plane position of a Si honeycomb structure matching the ratio between atomic sites derived from the spectrum within the error bars is
F+G+O
Atomic-scale buckling of a Si layer.—Proof for the presence of Si atoms at the surface comes from the surface-sensitive Si 2𝑝 photoelectron spectrum obtained at normal emission, shown in Fig. 2(a). The sharpness of the features is a clear indication of Si atoms in well-defined chemical environments different from those at the Si(111)-(7 ×7) surface. As quantified by a peak fitting, the Si 2𝑝 doublet consists of three components labeled 𝛼, 𝛽, and 𝛾, which are related to three different chemical environments of the Si ad-atoms, denoted Si𝐴, Si𝐵, and Si𝐶. Relative to the main peaks which have major contributions from the 𝛽 chemical state, 𝛾 and 𝛼 are shifted 140 ±5 meV and 260 ±5 meV, respectively. The respective areal weights for peaks 𝛼, 𝛽, and 𝛾 are 0.32 ±0.05, 0.55 ±0.05 and 0.13 ±0.05. The single in-plane position of a Si honeycomb structure matching the ratio between atomic sites derived from the spectrum within the error bars is
F+G+O
Atomic-scale buckling of a Si layer.—Proof for the presence of Si atoms at the surface comes from the surface-sensitive Si 2𝑝 photoelectron spectrum obtained at normal emission, shown in Fig. 2(a). The sharpness of the features is a clear indication of Si atoms in well-defined chemical environments different from those at the Si(111)-(7 ×7) surface. As quantified by a peak fitting, the Si 2𝑝 doublet consists of three components labeled 𝛼, 𝛽, and 𝛾, which are related to three different chemical environments of the Si ad-atoms, denoted Si𝐴, Si𝐵, and Si𝐶. Relative to the main peaks which have major contributions from the 𝛽 chemical state, 𝛾 and 𝛼 are shifted 140 ±5 meV and 260 ±5 meV, respectively. The respective areal weights for peaks 𝛼, 𝛽, and 𝛾 are 0.32 ±0.05, 0.55 ±0.05 and 0.13 ±0.05. The single in-plane position of a Si honeycomb structure matching the ratio between atomic sites derived from the spectrum within the error bars is
F+G+O
Atomic-scale buckling of a Si layer.—Proof for the presence of Si atoms at the surface comes from the surface-sensitive Si 2𝑝 photoelectron spectrum obtained at normal emission, shown in Fig. 2(a). The sharpness of the features is a clear indication of Si atoms in well-defined chemical environments different from those at the Si(111)-(7 ×7) surface. As quantified by a peak fitting, the Si 2𝑝 doublet consists of three components labeled 𝛼, 𝛽, and 𝛾, which are related to three different chemical environments of the Si ad-atoms, denoted Si𝐴, Si𝐵, and Si𝐶. Relative to the main peaks which have major contributions from the 𝛽 chemical state, 𝛾 and 𝛼 are shifted 140 ±5 meV and 260 ±5 meV, respectively. The respective areal weights for peaks 𝛼, 𝛽, and 𝛾 are 0.32 ±0.05, 0.55 ±0.05 and 0.13 ±0.05. The single in-plane position of a Si honeycomb structure matching the ratio between atomic sites derived from the spectrum within the error bars is
F+G+O
Atomic-scale buckling of a Si layer.—Proof for the presence of Si atoms at the surface comes from the surface-sensitive Si 2𝑝 photoelectron spectrum obtained at normal emission, shown in Fig. 2(a). The sharpness of the features is a clear indication of Si atoms in well-defined chemical environments different from those at the Si(111)-(7 ×7) surface. As quantified by a peak fitting, the Si 2𝑝 doublet consists of three components labeled 𝛼, 𝛽, and 𝛾, which are related to three different chemical environments of the Si ad-atoms, denoted Si𝐴, Si𝐵, and Si𝐶. Relative to the main peaks which have major contributions from the 𝛽 chemical state, 𝛾 and 𝛼 are shifted 140 ±5 meV and 260 ±5 meV, respectively. The respective areal weights for peaks 𝛼, 𝛽, and 𝛾 are 0.32 ±0.05, 0.55 ±0.05 and 0.13 ±0.05. The single in-plane position of a Si honeycomb structure matching the ratio between atomic sites derived from the spectrum within the error bars is